5 results
Influence of SiOx Capping Layer Quality on Impurity-Free Interdiffusion in GaAs/AlGaAs Quantum Wells
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- Journal:
- MRS Online Proceedings Library Archive / Volume 607 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 491
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- 1999
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A Dlts Investigation of The Effect of Ion Mass, Fluence and Energy on the Introduction of a Higher-Order Vacancy Cluster in Noble Gas Ion Bombarded n-Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 540 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, 121
- Print publication:
- 1998
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Schottky Barrier Modification Of Low Energy Ar-Ion Bombarded GaAs And Si
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- Journal:
- MRS Online Proceedings Library Archive / Volume 510 / January 1998
- Published online by Cambridge University Press:
- 10 February 2011, 443
- Print publication:
- January 1998
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Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 510 / January 1998
- Published online by Cambridge University Press:
- 10 February 2011, 519
- Print publication:
- January 1998
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Optical And Electrical Characterisation Study Of SICL4 Reactive Ion Etched Gaas
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- Journal:
- MRS Online Proceedings Library Archive / Volume 442 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 75
- Print publication:
- 1996
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